The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Feb. 03, 2015
Applicant:
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Inventors:
Assignee:
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 29/47 (2006.01); H01L 29/45 (2006.01); H01L 21/306 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28575 (2013.01); H01L 21/28581 (2013.01); H01L 29/2003 (2013.01); H01L 29/452 (2013.01); H01L 29/475 (2013.01); H01L 21/30617 (2013.01);
Abstract
A technique of reducing the contact resistance between a semiconductor substrate and a metal layer is provided. A manufacturing method of a semiconductor device comprises a process of forming a metal layer on an N surface of a nitride semiconductor substrate. The process of forming the metal layer includes a first process of forming a metal layer by sputtering at a film formation rate controlled to 4 nm/minute or lower.