The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2017

Filed:

May. 20, 2014
Applicant:

Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, CN;

Inventors:

Tie Li, Shanghai, CN;

Chen Liang, Shanghai, CN;

Yuelin Wang, Shanghai, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/22 (2006.01); H01L 21/38 (2006.01); H01L 21/04 (2006.01); C01B 31/02 (2006.01); C01B 31/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/041 (2013.01); C01B 31/02 (2013.01); C01B 31/0484 (2013.01);
Abstract

The invention provides a sulfur doping method for graphene, which comprises the steps of: 1) providing graphene and placing the grapheme in a chemical vapor deposition reaction chamber; 2) employing an inert gas to perform ventilation and exhaust treatment in the reaction chamber; 3) introducing a sulfur source gas to perform sulfur doping on the graphene at 500-1050° C.; and 4) cooling the reaction chamber in a hydrogen and inert gas atmosphere. The present invention can perform sulfur doping on the graphene simply and efficiently, the economic cost is low, and large-scale production can be realized. Large area sulfur doping on graphene can be realized, and doping of graphene on an insulating substrate or metal substrate can be carried out directly.


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