The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Jan. 27, 2015
Eugene Technology Co., Ltd., Yongin-si, Gyeonggi-do, KR;
Seung-Woo Shin, Hwaseong-si, KR;
Woo Duck Jung, Suwon-si, KR;
Sung-Kil Cho, Yongin-si, KR;
Ho Min Choi, Yongin-si, KR;
Wan Suk Oh, Yongin-si, KR;
Koon Woo Lee, Yongin-si, KR;
Hyuk Lyong Gwon, Siheung-si, KR;
Seong Jin Park, Seoul, KR;
Ki Ho Kim, Asan-si, KR;
Kang-Wook Lee, Uijeongbu-si, KR;
EUGENE TECHNOLOGY CO., LTD., Yongin-si, Gyeonggi-do, KR;
Abstract
Provided is a method for forming a silicon film, and more particularly, to a method for forming a polycrystalline silicon film including pretreatment process in a process for forming a silicon film. According to an embodiment of the present invention, a method for forming a polycrystalline silicon film by annealing a amorphous silicon film deposited on a base, the method includes a pretreatment process of allowing a pretreatment gas including at least one of N, C, O and B to flow.