The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Jan. 03, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02389 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); H01L 21/02439 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 21/02664 (2013.01); H01L 29/2003 (2013.01); H01L 21/3065 (2013.01);
Abstract
A method of growing a nitride semiconductor layer may include preparing a substrate in a reactor, growing a first nitride semiconductor on the substrate at a first temperature, the first nitride semiconductor having a thermal expansion coefficient different from a thermal expansion coefficient of the substrate, and removing the substrate at a second temperature.