The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Jan. 21, 2016
Applicant:
Lapis Semiconductor Co., Ltd., Kanagawa, JP;
Inventor:
Makoto Ishida, Kanagawa, JP;
Assignee:
LAPIS SEMICONDUCTOR CO., LTD., Yokohama, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/304 (2006.01); H01J 37/36 (2006.01); H01J 37/317 (2006.01); H01J 37/244 (2006.01); G01R 19/00 (2006.01);
U.S. Cl.
CPC ...
H01J 37/304 (2013.01); H01J 37/244 (2013.01); H01J 37/3171 (2013.01); G01R 19/0061 (2013.01); H01J 2237/24495 (2013.01); H01J 2237/30472 (2013.01); H01J 2237/31703 (2013.01);
Abstract
A monitoring device includes a filtering section that extracts and outputs at least one of a high frequency component or a low frequency component of a beam current received from a detection output section of an ion implantation device; and a computation section that computes at least one of a value corresponding to a content ratio of the high frequency component in the beam current, or a value corresponding to a content ratio of the low frequency component in the beam current.
Quick Actions:
Ishida, Makoto. (2017). Monitoring device, ion implantation device, and monitoring method (U.S. Patent No. 9741534). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9741534
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile