The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Dec. 13, 2013
Applicant:
Lg Chem Ltd., Seoul, KR;
Inventors:
Sang Yun Jung, Daejeon, KR;
Han Nah Jeong, Daejeon, KR;
Cheol Hee Park, Daejeon, KR;
Hyun Chul Kim, Daejeon, KR;
Byung Kyu Lim, Daejeon, KR;
Assignee:
LG CHEM, LTD., Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01B 1/08 (2006.01); C01B 33/113 (2006.01); H01M 4/48 (2010.01); H01M 4/485 (2010.01); C01B 33/18 (2006.01); H01M 10/052 (2010.01); H01M 4/131 (2010.01); H01M 10/05 (2010.01);
U.S. Cl.
CPC ...
H01B 1/08 (2013.01); C01B 33/113 (2013.01); C01B 33/181 (2013.01); H01M 4/483 (2013.01); H01M 4/485 (2013.01); H01M 4/131 (2013.01); H01M 4/48 (2013.01); H01M 10/05 (2013.01); H01M 10/052 (2013.01);
Abstract
Provided is a method of manufacturing silicon oxide by which an amount of oxygen of the silicon oxide may be controlled. The method of manufacturing silicon oxide may include mixing silicon and silicon dioxide to be included in a reaction chamber, depressurizing a pressure of the reaction chamber to obtain a high degree of vacuum while increasing a temperature in the reaction chamber to a reaction temperature, and reacting the mixture of silicon and silicon dioxide in a reducing atmosphere.