Semiconductor memory device and operating method thereof

Abstract

A semiconductor memory device includes: a cell array region storing and outputting data selected based on an input address and including a first cell region storing a failure address; an input control signal generator generating a compression signal informing presence of failure cells, and generating an input control signal based on the compression signal; an output control signal generator generating an output control signal in response to the input control signal and a pre-charge signal; a failure address latch storing the input address as the failure address in response to the input control signal, and outputting the failure address based on the output control signal; a failure address mapper mapping the failure address to the data line to store the failure address in the first cell region; and a non-volatile memory device receiving the failure address from the first cell region and programming it in a rupture mode.