The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2017

Filed:

Apr. 10, 2017
Applicant:

Sandisk Technologies Llc, Plano, TX (US);

Inventors:

Philip Reusswig, Milpitas, CA (US);

Harish Singidi, Milpitas, CA (US);

Deepak Raghu, Milpitas, CA (US);

Gautam Dusija, Milpitas, CA (US);

Pao-Ling Koh, Milpitas, CA (US);

Chris Avila, Milpitas, CA (US);

Assignee:

SanDisk Technologies LLC, Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/34 (2006.01); G11C 16/26 (2006.01); G11C 11/56 (2006.01); G06F 11/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3431 (2013.01); G06F 11/1072 (2013.01); G11C 11/5642 (2013.01); G11C 16/26 (2013.01); G11C 16/349 (2013.01);
Abstract

Methods and systems are provided where non-volatile solid state memory may include selected memory cells coupled to a selected word line and proxy memory cells coupled to a proxy word line. The selected memory cells may be non-adjacent to the proxy memory cells and be selected for a read operation. A read proxy voltage may be applied to the proxy word line when data is read from the selected memory cells. A read disturb may be determined based on a difference between a predetermined value stored in the proxy memory cells and a value read from the proxy memory cells.


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