The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Dec. 10, 2015
Applicants:
Donghun Kwak, Hwaseong-si, KR;
Kitae Park, Seongnam-si, KR;
Inventors:
DongHun Kwak, Hwaseong-si, KR;
Kitae Park, Seongnam-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/24 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/14 (2006.01);
U.S. Cl.
CPC ...
G11C 16/24 (2013.01); G11C 16/0466 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); G11C 16/3418 (2013.01); G11C 16/3422 (2013.01); G11C 16/3427 (2013.01); G11C 16/3431 (2013.01);
Abstract
A nonvolatile memory device includes at least two strings that are vertically stacked on a substrate and share one bit line. A program method of the nonvolatile memory device includes setting a pre-charge condition on the basis of a disturb environment between the at least two cell strings, pre-charging or not pre-charging an unselected cell string among the at least two cell strings in response to the pre-charge condition and programming memory cells in a selected cell string among the at least two cell strings.