The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2017

Filed:

Sep. 17, 2015
Applicant:

Arm Limited, Cambridge, GB;

Inventors:

Andy Wangkun Chen, Austin, TX (US);

Yew Keong Chong, Austin, TX (US);

Gus Yeung, Austin, TX (US);

Bo Zheng, San Jose, CA (US);

George Lattimore, Austin, TX (US);

Assignee:

ARM Limited, Cambridge, GB;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 8/12 (2006.01); G11C 5/14 (2006.01); G11C 7/10 (2006.01); G11C 7/12 (2006.01); G11C 7/22 (2006.01); G11C 11/419 (2006.01); G11C 8/18 (2006.01);
U.S. Cl.
CPC ...
G11C 8/12 (2013.01); G11C 5/147 (2013.01); G11C 7/1078 (2013.01); G11C 7/12 (2013.01); G11C 7/22 (2013.01); G11C 8/18 (2013.01); G11C 11/419 (2013.01);
Abstract

Within a memorycomprising an arrayof bit cellswrite driver circuitryuses a boosted write signal which is boosted to a lower than normal level during a write operation. Column select transistorsare driven by column select circuitry. The column select signal is boosted to a lower than normal level when a column is unselected and to higher than a normal level when a column is selected. Voltage boost circuitry, such as charge pumpsare employed within the column select circuitryto achieve these boosted levels for the columns select signal.


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