The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Sep. 06, 2013
The Trustees of the Stevens Institute of Technology, Hoboken, NJ (US);
Youn-su Kim, Hoboken, NJ (US);
Kitu Kumar, Princeton Junction, NJ (US);
Eui-Hyeok Yang, Fort Lee, NJ (US);
Frank Fisher, Union City, NJ (US);
THE TRUSTEES OF THE STEVENS INSTITUTE OF TECHNOLOGY, Hoboken, NJ (US);
Abstract
Graphene-carbon nanotube multi-stack three-dimensional architectures (graphene-CNT stacks) are formed by a 'popcorn-like' growth method, in which carbon nanotubes are grown throughout the architecture in a continuous step. Alternating layers of graphene and a transition metal are grown by a vapor deposition process. The metal is fragmented and etched to form an array of catalytic sites. Carbon nanotubes grow from the catalytic sites in a vapor-solid-liquid process. The graphene-CNT stacks have applications in electrical energy storage devices, such as supercapacitors and batteries. The directly grown carbon nanotube array between graphene layers provides ease of ion diffusion and electron transfer, in addition to being an active material, spacer and electron pathway.