The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Mar. 25, 2014
Invensense, Inc., San Jose, CA (US);
Jongwoo Shin, Pleasanton, CA (US);
Kirt Reed Williams, Portola Valley, CA (US);
Cerina Zhang, Sunnyvale, CA (US);
Kuolung (Dino) Lei, San Jose, CA (US);
INVENSENSE, INC., San Jose, CA (US);
Abstract
A MEMS (microelectromechanical systems) structure comprises a MEMS wafer. A MEMS wafer includes a cap with cavities bonded to a structural layer through a dielectric layer disposed between the cap and the structural layer. Unique configurations of MEMS devices and methods of providing such are set forth which provide for, in part, creating rounded, scalloped or chamfered MEMS profiles by shaping the etch mask photoresist reflow, by using a multi-step deep reactive ion etch (DRIE) with different etch characteristics, or by etching after DRIE.