The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2017

Filed:

Oct. 20, 2015
Applicant:

Commissariat À L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Marie Guillon, Fontanil-Cornillon, FR;

Yvon Cazaux, Grenoble, FR;

Josep Segura Puchades, Fontaine, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N 3/14 (2006.01); H04N 5/369 (2011.01); H04N 5/374 (2011.01); H04N 5/355 (2011.01); H04N 5/3745 (2011.01);
U.S. Cl.
CPC ...
H04N 5/3698 (2013.01); H04N 5/3559 (2013.01); H04N 5/3741 (2013.01); H04N 5/3742 (2013.01); H04N 5/37452 (2013.01);
Abstract

The invention concerns an image sensor comprising: at least one pixel having a photodiode (PD); a sensing node (SN) coupled to the photodiode via a transfer gate (); and a further node (AN) coupled to the sensing node (SN) via a first transistor (); and a control circuit () adapted: to apply, during a reset operation of the voltage levels at the sensing node (SN) and further node (AN), a first voltage level (VDD) to a control node of the first transistor (); and to apply, during a transfer operation of charge from the photodiode (PD) to the sensing node (SN), a second voltage level (VSK) to the control node of the first transistor (), the second voltage level being lower than the first voltage level and higher than a ground voltage of the pixel.


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