The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2017

Filed:

Oct. 06, 2015
Applicant:

Rf Micro Devices, Inc., Greensboro, NC (US);

Inventors:

Gernot Fattinger, Sorrento, FL (US);

Alireza Tajic, Winter Springs, FL (US);

Assignee:

Qorvo US, Inc., Greensboro, NC (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03H 9/02 (2006.01); H03H 9/13 (2006.01); H03H 3/02 (2006.01); H03H 9/17 (2006.01);
U.S. Cl.
CPC ...
H03H 9/02157 (2013.01); H03H 3/02 (2013.01); H03H 9/02086 (2013.01); H03H 9/02118 (2013.01); H03H 9/132 (2013.01); H03H 9/171 (2013.01);
Abstract

Embodiments of a Bulk Acoustic Wave (BAW) resonator in which an outer region of the BAW resonator is engineered in such a manner that lateral leakage of mechanical energy from an active region of the BAW resonator is reduced, and methods of fabrication thereof, are disclosed. In some embodiments, a BAW resonator includes a piezoelectric layer, a first electrode on a first surface of the piezoelectric layer, a second electrode on a second surface of the piezoelectric layer opposite the first electrode, and a passivation layer on a surface of the second electrode opposite the piezoelectric layer, the passivation layer having a thickness (T). The BAW resonator also includes a material on the second surface of the piezoelectric layer adjacent to the second electrode in an outer region of the BAW resonator. The additional material has a thickness that is n times the thickness (T) of the passivation layer.


Find Patent Forward Citations

Loading…