The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2017

Filed:

Dec. 13, 2016
Applicant:

Nichia Corporation, Anan-shi, Tokushima, JP;

Inventors:

Susumu Harada, Anan, JP;

Yasuhiro Kawata, Anan, JP;

Assignee:

Nichia Corporation, Anan-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01S 5/323 (2006.01); H01S 5/028 (2006.01); H01S 5/02 (2006.01); H01S 5/22 (2006.01);
U.S. Cl.
CPC ...
H01S 5/32341 (2013.01); H01S 5/0202 (2013.01); H01S 5/028 (2013.01); H01S 5/22 (2013.01);
Abstract

A semiconductor laser element includes a semiconductor structure having an optical cavity and a protective film. The semiconductor structure includes a pair of stepped parts at both ends of the semiconductor structure in a cavity width direction, and a first texture pattern extending in a cavity length direction on a bottom surface of each of the stepped parts. The first texture pattern includes recesses and/or protrusions along the cavity length direction. The protective film covers at least part of the first texture pattern to define a second texture pattern having upper surfaces and bottom surfaces. A length of the bottom surfaces of the second texture pattern is less than a height from the bottom surfaces to a surface of the semiconductor structure. A length of the upper surfaces of the second texture pattern is less than a height from the upper surfaces to the surface of the semiconductor structure.


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