The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2017

Filed:

Jan. 19, 2016
Applicant:

Koninklijke Philips N.v., Eindhoven, NL;

Inventor:
Assignee:

Koninklijke Philips N.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); H01S 5/187 (2006.01); G06F 3/03 (2006.01); H01S 5/026 (2006.01); H01L 31/11 (2006.01); H01L 31/167 (2006.01); H01L 31/18 (2006.01); H01S 5/022 (2006.01);
U.S. Cl.
CPC ...
H01S 5/187 (2013.01); G06F 3/0317 (2013.01); H01L 31/1105 (2013.01); H01L 31/167 (2013.01); H01L 31/184 (2013.01); H01S 5/0264 (2013.01); H01S 5/183 (2013.01); H01S 5/02296 (2013.01); H01S 5/18388 (2013.01);
Abstract

The present invention relates to a semiconductor laser for use in an optical module for measuring distances and/or movements, using the self-mixing effect. The semiconductor laser comprises a layer structure including an active region () embedded between two layer sequences () and further comprises a photodetector arranged to measure an intensity of an optical field resonating in said laser. The photodetector is a phototransistor composed of an emitter layer (e), a collector layer (c) and a base layer (b), each of which being a bulk layer and forming part of one of said layer sequences (). With the proposed semiconductor laser an optical module based on this laser can be manufactured more easily, at lower costs and in a smaller size than known modules.


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