The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2017

Filed:

Jul. 08, 2016
Applicant:

Northrop Grumman Systems Corporation, Falls Church, VA (US);

Inventors:

Yaochung Chen, Rancho Palos Verdes, CA (US);

Vincent Gambin, Torrance, CA (US);

Xianglin Zeng, Monterey Park, CA (US);

Assignee:

Northrop Grumman Systems Corporation, Falls Church, VA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/183 (2006.01); H01S 5/187 (2006.01); H01S 5/042 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18369 (2013.01); H01S 5/0421 (2013.01); H01S 5/0425 (2013.01); H01S 5/187 (2013.01); H01S 5/18377 (2013.01); H01S 5/34313 (2013.01); H01S 5/183 (2013.01); H01S 5/18308 (2013.01); H01S 5/18344 (2013.01); H01S 2304/02 (2013.01); H01S 2304/04 (2013.01);
Abstract

A vertical cavity surface emitting laser (VCSEL) including a substrate and a bottom distributed Bragg reflector (DBR) having a plurality of layers deposited on the substrate. The VCSEL also includes a first charge confining layer deposited on the bottom DBR, an active region deposited on the first charge confining layer, and a second charge confining layer deposited on the active region. A current blocking layer is provided on the second charge confining layer, and a top epitaxial DBR including a plurality of top epitaxial DBR layers is deposited on the current blocking layer. A top electrode is deposited on the top epitaxial DBR, a bottom electrode is deposited on the bottom DBR and adjacent to the active region, and a top dielectric DBR is deposited on the top epitaxial DBR and the top electrode.


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