The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2017

Filed:

Feb. 08, 2016
Applicant:

Invisage Technologies, Inc., Menlo Park, CA (US);

Inventors:

Edward Hartley Sargent, Toronto, CA;

Ghada Koleilat, Toronto, CA;

Larissa Levina, Toronto, CA;

Assignee:

InVisage Technologies, Inc., Newark, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0336 (2006.01); H01L 51/42 (2006.01); B82Y 20/00 (2011.01); B82Y 30/00 (2011.01); H01L 31/032 (2006.01); H01L 31/0352 (2006.01); H01L 31/0384 (2006.01); H01L 31/07 (2012.01); H01L 51/44 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/4213 (2013.01); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); H01L 31/0322 (2013.01); H01L 31/0324 (2013.01); H01L 31/0352 (2013.01); H01L 31/0384 (2013.01); H01L 31/07 (2013.01); H01L 51/441 (2013.01); H01L 51/0046 (2013.01); H01L 51/0084 (2013.01); Y02E 10/541 (2013.01); Y02P 70/521 (2015.11);
Abstract

A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.


Find Patent Forward Citations

Loading…