The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2017

Filed:

Mar. 28, 2016
Applicant:

Toppan Printing Co., Ltd., Taito-ku, JP;

Inventor:

Ryohei Matsubara, Taito-ku, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/05 (2006.01); H01L 27/12 (2006.01); G02F 1/1362 (2006.01); H01L 51/10 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0545 (2013.01); G02F 1/136227 (2013.01); H01L 27/1288 (2013.01); H01L 27/1292 (2013.01); H01L 27/3258 (2013.01); H01L 51/105 (2013.01); H01L 2227/323 (2013.01);
Abstract

A thin film transistor array includes thin film transistors positioned in a matrix, each of the thin film transistors including a substrate, a gate electrode formed on the substrate, a gate insulation layer formed on the gate electrode, a source electrode formed on the gate insulation layer, a drain electrode formed on the gate insulation layer, a pixel electrode formed on the gate insulation layer and connected to the source electrode and the drain electrode, a semiconductor layer formed between the source electrode and the drain electrode, an interlayer insulation film covering the source electrode, the drain electrode, the semiconductor layer and a portion of the pixel electrode, and an upper pixel electrode formed on the interlayer insulation film and connected to the pixel electrode. The interlayer insulation film has one or more concave portions and one or more via hole portions.


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