The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Jul. 06, 2016
Wonjun Lee, Seoul, KR;
Inseak Hwang, Suwon-si, KR;
Yongsun Ko, Suwon-si, KR;
Changkyu Lee, Seoul, KR;
Jinhye Bae, Suwon-si, KR;
Hyunchul Shin, Seoul, KR;
Shinhee Han, Seongnam-si, KR;
Yoonsung Han, Seoul, KR;
Wonjun Lee, Seoul, KR;
Inseak Hwang, Suwon-si, KR;
Yongsun Ko, Suwon-si, KR;
Changkyu Lee, Seoul, KR;
Jinhye Bae, Suwon-si, KR;
Hyunchul Shin, Seoul, KR;
Shinhee Han, Seongnam-si, KR;
Yoonsung Han, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Manufacturing a MRAM device may include removing etch residues from a magnetic tunnel junction (MTJ) pattern in the presence of an atmosphere. The removing may include applying a cleaning solution to one or more surfaces of the MTJ pattern. Manufacturing the MRAM device may include removing an oxide layer based on sputter etching of the MTJ pattern. The etch residues may be removed such that the oxide layer is formed. Removing the etch residues may include applying a cleaning solution to the MTJ pattern. The etch residues may be removed in the presence of an atmosphere. The MTJ pattern may be formed based on patterning an MTJ layer in a vacuum state such that the etch residues are formed on a surface of the MTJ pattern.