The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2017

Filed:

Feb. 19, 2016
Applicant:

SK Hynix Inc., Icheon-Si, KR;

Inventor:

Hyung-Suk Lee, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-Si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/08 (2006.01); H01L 43/12 (2006.01); H01L 43/02 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); H01L 43/02 (2013.01); H01L 43/12 (2013.01); H01L 45/06 (2013.01); H01L 45/141 (2013.01); H01L 45/16 (2013.01);
Abstract

An electronic device may include a semiconductor memory. The semiconductor memory may include a substrate including a first region and a second region; buried gates formed in the first region and the second region, the buried gates in the second region having a different density distribution from the buried gates in the first region; first and second junction regions formed in the first and second regions, respectively, and having a same depth as each other; and a variable resistance element formed over the substrate and electrically connected to the buried gates in the first region. According to the implementations, the characteristics of the variable resistance element can be improved.


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