The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2017

Filed:

Jan. 05, 2016
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Martin Mandl, Lappersdorf, DE;

Martin Strassburg, Donaustauf, DE;

Christopher Kölper, Regensburg, DE;

Alexander F. Pfeuffer, Regensburg, DE;

Patrick Rode, Regensburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/44 (2010.01); H01L 33/18 (2010.01); H01L 33/24 (2010.01); H01L 27/15 (2006.01); H01L 33/60 (2010.01); H01L 33/14 (2010.01); H01L 33/20 (2010.01); H01L 33/32 (2010.01); H01L 33/08 (2010.01); H01L 33/22 (2010.01); H01L 33/42 (2010.01); H01L 33/46 (2010.01);
U.S. Cl.
CPC ...
H01L 33/44 (2013.01); H01L 27/156 (2013.01); H01L 33/14 (2013.01); H01L 33/18 (2013.01); H01L 33/20 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/60 (2013.01); H01L 33/08 (2013.01); H01L 33/22 (2013.01); H01L 33/42 (2013.01); H01L 33/46 (2013.01);
Abstract

An optoelectronic semiconductor chip includes a multiplicity of active regions arranged at a distance from one another, and a continuous current spreading layer, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the current spreading layer covers all cover layers of the active region.


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