IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9735314 B1

PDFFull Text
Date of Patent:
Aug. 15, 2017

Filed:

Jun. 06, 2016

Nitride semiconductor light emitting device

Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Katsuya Samonji, Toyama, JP;

Kazuhiko Yamanaka, Toyama, JP;

Shinji Yoshida, Toyama, JP;

Hiroyuki Hagino, Osaka, JP;

Assignee:

PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD., Osaka, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Khiem D Nguyen

Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01); H01S 5/024 (2006.01); H01S 5/20 (2006.01); H01S 5/343 (2006.01); H01L 33/14 (2010.01); H01L 33/16 (2010.01); H01L 33/48 (2010.01); B82Y 20/00 (2011.01); H01L 33/64 (2010.01); H01L 33/06 (2010.01); H01S 5/02 (2006.01); H01S 5/042 (2006.01); H01S 5/323 (2006.01); H01S 5/022 (2006.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); B82Y 20/00 (2013.01); H01L 33/06 (2013.01); H01L 33/145 (2013.01); H01L 33/16 (2013.01); H01L 33/32 (2013.01); H01L 33/483 (2013.01); H01L 33/64 (2013.01); H01S 5/0206 (2013.01); H01S 5/0226 (2013.01); H01S 5/02272 (2013.01); H01S 5/02469 (2013.01); H01S 5/02476 (2013.01); H01S 5/0425 (2013.01); H01S 5/2009 (2013.01); H01S 5/32341 (2013.01); H01S 5/34333 (2013.01); H01L 33/641 (2013.01); H01L 2224/48091 (2013.01); H01S 5/02212 (2013.01); H01S 2304/04 (2013.01);
Abstract

A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.

Find Patent Forward Citations

Loading…