The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Jul. 03, 2013
Epistar Corporation, Hsinchu, TW;
Hsin-Chih Chiu, Hsinchu, TW;
Chih-Chiang Lu, Hsinchu, TW;
Chun-Yu Lin, Hsinchu, TW;
Ching-Huai Ni, Hsinchu, TW;
Yi-Ming Chen, Hsinchu, TW;
Tzu-Chieh Hsu, Hsinchu, TW;
Ching-Pei Lin, Hsinchu, TW;
EPISTAR CORPORATION, Hsinchu, TW;
Abstract
A method of manufacturing a semiconductor light-emitting device, comprises the steps of providing a first substrate; providing multiple epitaxial units on the first substrate, wherein the plurality of epitaxial units comprises: multiple first epitaxial units, wherein each of the first epitaxial units has a first geometric shape and a first area; and multiple second epitaxial units, wherein each of the second epitaxial units has a second geometric shape and a second area; providing a second substrate with a surface; transferring the multiple second epitaxial units to the surface of the second substrate; and dividing the first substrate to form multiple first semiconductor light-emitting devices, wherein each of the first semiconductor light-emitting devices has the first epitaxial unit; wherein the first geometric shape is different from the second geometric shape, or the first area is different from the second area.