The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Nov. 15, 2013
Applicant:
Dow Global Technologies Llc, Midland, MI (US);
Inventors:
Todd R. Bryden, Midland, MI (US);
Buford I. Lemon, Willow Grove, PA (US);
Joseph George, Midland, MI (US);
Rebekah Kristine Ligman Feist, Midland, MI (US);
Assignee:
DOW GLOBAL TECHNOLOGIES LLC, Midland, MI (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/0749 (2012.01); H01L 31/0392 (2006.01); C23C 14/06 (2006.01); H01L 21/02 (2006.01); H01L 31/0296 (2006.01); H01L 31/032 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0749 (2013.01); C23C 14/0623 (2013.01); H01L 21/02565 (2013.01); H01L 21/02568 (2013.01); H01L 21/02576 (2013.01); H01L 31/0296 (2013.01); H01L 31/02963 (2013.01); H01L 31/0322 (2013.01); H01L 31/0323 (2013.01); H01L 31/03925 (2013.01); H01L 31/03928 (2013.01); H01L 31/18 (2013.01); H01L 31/1828 (2013.01); Y02E 10/50 (2013.01); Y02E 10/541 (2013.01); Y02E 10/543 (2013.01);
Abstract
A layer of an n-type chalcogenide compositions provided on a substrate in the presence of an oxidizing gas in an amount sufficient to provide a resistivity to the layer that is less than the resistivity a layer deposited under identical conditions but in the substantial absence of oxygen.