The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Jun. 29, 2010
Applicants:
Fuqiang Huang, Shanghai, CN;
Yaoming Wang, Shanghai, CN;
Inventors:
Fuqiang Huang, Shanghai, CN;
Yaoming Wang, Shanghai, CN;
Assignee:
SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES, Shanghai, CN;
Primary Examiner:
Int. Cl.
CPC ...
B05D 5/12 (2006.01); H01L 31/032 (2006.01); H01L 21/02 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0322 (2013.01); H01L 21/02568 (2013.01); H01L 21/02628 (2013.01); H01L 31/1844 (2013.01); Y02E 10/541 (2013.01); Y02E 10/544 (2013.01);
Abstract
A preparation method of the light absorption layer of a copper-indium-gallium-sulfur-selenium film solar cell is provided. The method employs a non-vacuum liquid-phase chemical technique, which comprises following steps: forming source solution containing copper, indium, gallium, sulfur and selenium; using the solution to form a precursor film on a substrate by a non-vacuum liquid-phase process; drying and annealing the precursor film. Thus, a compound film of copper-indium-gallium-sulfur-selenium is gained.