The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Feb. 29, 2016
Applicant:
Stmicroelectronics (Tours) Sas, Tours, FR;
Inventor:
Arnaud Yvon, Saint-Cyr sur Loire, FR;
Assignee:
STMicroelectronics (Tours) SAS, Tours, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/872 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 23/48 (2006.01); H01L 27/02 (2006.01); H01L 27/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 23/481 (2013.01); H01L 27/0207 (2013.01); H01L 27/0814 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/417 (2013.01); H01L 29/66212 (2013.01);
Abstract
A Schottky diode is formed on a silicon support. A non-doped GaN layer overlies the silicon support. An AlGaN layer overlies the non-doped GaN layer. A first metallization forming an ohmic contact and a second metallization forming a Schottky contact are provided in and on the AlGaN layer. First vias extend from the first metallization towards the silicon support. Second vias extend from the second metallization towards an upper surface.