The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
May. 16, 2016
Lg Display Co., Ltd., Seoul, KR;
Industry-academic Cooperation Foundation, Yonsei University, Seoul, KR;
LG Display Co., Ltd., Seoul, KR;
Abstract
The present disclosure relates to a thin film transistor substrate having a high reliability oxide semiconductor material including a metal oxide semiconductor material. A thin film transistor substrate includes a substrate, a gate electrode disposed on the substrate, a semiconductor layer including an oxide semiconductor material combining one or more of indium, gallium and zinc, oxygen, and a doping material. The doping material may be a group 15 or 16 gaseous element. The semiconductor layer has a channel area overlapping with the gate electrode with a gate insulating layer, a source area extended from one side of the channel area, and a drain area extended from another side of the channel area, a source electrode connected to the source area, and a drain electrode connected to the drain area.