The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Nov. 10, 2015
Applicant:
Lg Display Co., Ltd., Seoul, KR;
Inventors:
Min-Cheol Kim, Goyang-si, KR;
Youn-Gyoung Chang, Goyang-si, KR;
Kwon-Shik Park, Seoul, KR;
So-Hyung Lee, Goyang-si, KR;
Ho-Young Jung, Paju-si, KR;
Ha-Jin Yoo, Paju-si, KR;
Jeong-Suk Yang, Asan-si, KR;
Assignee:
LG DISPLAY CO., LTD., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/477 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 21/02667 (2013.01); H01L 21/477 (2013.01); H01L 29/1033 (2013.01);
Abstract
An oxide semiconductor crystallization method may include depositing an In—Ga—Zn oxide over the substrate while heating a substrate to a temperature of 200 to 300° C., and heat-treating the deposited In—Ga—Zn oxide at a temperature of 200 to 350° C., thereby forming an oxide semiconductor layer crystallized throughout an entire thickness thereof.