The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2017

Filed:

Nov. 25, 2014
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Ryota Sakaida, Osaka, JP;

Nobuyoshi Takahashi, Toyama, JP;

Kosaku Saeki, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/30 (2006.01); H01L 27/146 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 23/485 (2006.01); H01L 51/44 (2006.01);
U.S. Cl.
CPC ...
H01L 27/307 (2013.01); H01L 21/28525 (2013.01); H01L 21/76889 (2013.01); H01L 21/76895 (2013.01); H01L 23/485 (2013.01); H01L 27/14612 (2013.01); H01L 27/14643 (2013.01); H01L 51/441 (2013.01); H01L 21/76897 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Each imaging pixel provided in a solid-state imaging device includes a charge accumulation part which is a diffusion region formed in a substrate, a gate electrode formed lateral to the charge accumulation part on the substrate, an insulating film formed on the charge accumulation part, and a contact plug connected to the charge accumulation part so as to penetrate the insulating film and made of semiconductor. The contact plug is, at a lower part thereof, embedded in the insulating film, and is, at an upper part thereof, exposed through the insulating film. Silicide is formed on the upper part of the contact plug, and the charge accumulation part and the gate electrode are covered by the insulating film.


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