The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Nov. 21, 2014
Boe Technology Group Co., Ltd., Beijing, CN;
Beijing Boe Optoelectronics Technology Co., Ltd., Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., Beijing, CN;
Abstract
A method of manufacturing a thin film transistor flat sensor that includes depositing a first metal film on a substrate and forming a common electrode on the substrate with one patterning process; successively depositing an insulating film and a second metal film on the substrate having the common electrode formed thereon, and forming a gate electrode by applying one pattering process to the second metal film; applying one patterning process to the deposited insulating film to form a common electrode insulating layer, wherein a first via hole is formed in the common electrode insulating layer at a location corresponding to the common electrode; depositing a transparent conductive film on the substrate having the common electrode, and forming a first conductive film layer, acting as one polar plate of a storage capacitor, on the common electrode and the gate electrode with one patterning process.