The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Aug. 29, 2014
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Inventors:
Takayuki Abe, Tochigi, JP;
Yasuyuki Takahashi, Kanagawa, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 27/112 (2006.01); H01L 23/498 (2006.01); H01L 23/522 (2006.01); H01L 27/105 (2006.01); H01L 49/02 (2006.01); H01L 29/94 (2006.01); H01L 23/00 (2006.01); H01L 27/12 (2006.01); H01L 23/525 (2006.01); H01L 23/532 (2006.01); H01L 23/66 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11206 (2013.01); H01L 23/4985 (2013.01); H01L 23/49833 (2013.01); H01L 23/49855 (2013.01); H01L 23/5227 (2013.01); H01L 23/5252 (2013.01); H01L 23/5329 (2013.01); H01L 23/53257 (2013.01); H01L 23/53271 (2013.01); H01L 23/66 (2013.01); H01L 24/24 (2013.01); H01L 27/0629 (2013.01); H01L 27/105 (2013.01); H01L 27/112 (2013.01); H01L 27/124 (2013.01); H01L 27/1255 (2013.01); H01L 28/60 (2013.01); H01L 29/94 (2013.01); H01L 2223/6672 (2013.01); H01L 2223/6677 (2013.01); H01L 2924/12044 (2013.01); H01L 2924/14 (2013.01); H01L 2924/15788 (2013.01);
Abstract
A semiconductor device including a memory cell is provided. The memory cell comprises a transistor, a memory element and a capacitor. One of first and second electrodes of the memory element and one of first and second electrodes of the capacitor are formed by a same metal film. The metal film functioning as the one of first and second electrodes of the memory element and the one of first and second electrodes of the capacitor is overlapped with a film functioning as the other of first and second electrodes of the capacitor.