The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Jun. 06, 2016
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Abstract
A semiconductor device includes an interlayer insulating film in which first contact holes and second contact holes are provided. Each of the second contact holes has a width narrower than a width of the corresponding first contact hole. A contact plug is located in the corresponding second contact hole. An upper electrode layer is arranged on an upper surface of the interlayer insulating film, upper surfaces of the contact plugs, and inner surfaces of the first contact holes. The protective insulating film covers an upper surface of the external field. An end portion extending along a direction intersecting with the plurality of trenches of the protective insulating film extends through a range located above the plurality of the second contact holes. A pillar region is in contact with the upper electrode layer in the first contact hole.