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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9735144 B1

PDFFull Text
Date of Patent:
Aug. 15, 2017

Filed:

Feb. 03, 2016

Electrostatic discharge (esd) protection device

Applicant:

Mediatek Inc., Hsin-Chu, TW;

Inventors:

Shih-Fan Chen, Tainan, TW;

Tai-Hsiang Lai, Hsinchu, TW;

Assignee:

MEDIATEK INC., Hsin-Chu, TW;

Attorney:

McClure, Qualey & Rodack, LLP

Primary Examiner:

Dao H Nguyen

Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/08 (2006.01); H01L 29/73 (2006.01); H01L 29/06 (2006.01); H01L 27/12 (2006.01); H01L 27/07 (2006.01); H01L 27/08 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0259 (2013.01); H01L 21/76224 (2013.01); H01L 27/0255 (2013.01); H01L 27/0711 (2013.01); H01L 27/0814 (2013.01); H01L 27/1203 (2013.01); H01L 29/0649 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/73 (2013.01);
Abstract

An electrostatic discharge (ESD) protection device includes a semiconductor layer having a first doped region, a second doped region, and an intrinsic region formed therein, and a plurality of insulating elements respectively formed therein. The plurality of insulating elements is respectively formed in a portion of the semiconductor layer between the first, second and third doped regions. The intrinsic region is formed at least in the semiconductor layer between one of the second and third regions and the other one of the second and third regions or between one of the second and third regions and the first region. The first doped region is formed with a first conductivity type, and the second and third doped regions are formed with a second conductivity type opposite to the first conductivity type.

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