The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Feb. 23, 2016
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Martin Vielemeyer, Villach, AT;
Michael Hutzler, Villach, AT;
Gilberto Curatola, Villach, AT;
Gianmauro Pozzovivo, Villach, AT;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/861 (2006.01); H01L 27/02 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 49/02 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 28/20 (2013.01); H01L 29/0653 (2013.01); H01L 29/0891 (2013.01); H01L 29/165 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/41766 (2013.01); H01L 29/778 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H01L 29/861 (2013.01);
Abstract
A transistor device includes a compound semiconductor body, a drain disposed in the compound semiconductor body and a source disposed in the compound semiconductor body and spaced apart from the drain by a channel region. A gate is provided for controlling the channel region. The transistor device further includes a gate overvoltage protection device connected between the source and the gate, the gate overvoltage protection device including p-type and n-type silicon-containing semiconductor material.