The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Sep. 25, 2009
Applicants:
Ryosuke Nakagawa, Kyoto, JP;
Yuichi Nakao, Kyoto, JP;
Inventors:
Ryosuke Nakagawa, Kyoto, JP;
Yuichi Nakao, Kyoto, JP;
Assignee:
ROHM CO., LTD., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53295 (2013.01); H01L 21/76801 (2013.01); H01L 21/76829 (2013.01); H01L 23/5227 (2013.01); H01L 23/53238 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device according to the present invention includes a semiconductor substrate, and an interlayer dielectric film, formed on the semiconductor substrate, having a multilayer structure of a compressive stress film and a tensile stress film.