The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2017

Filed:

Jan. 29, 2016
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Manish Ranjan, Sherwood, OR (US);

Cian Sweeney, Portland, OR (US);

Shantinath Ghongadi, Tigard, OR (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/768 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67253 (2013.01); H01L 21/67023 (2013.01); H01L 21/76814 (2013.01); H01L 21/76873 (2013.01); H01L 21/76879 (2013.01); H01L 22/12 (2013.01); H01L 22/26 (2013.01);
Abstract

Disclosed are methods of preparing a semiconductor substrate having a metal seed layer for a subsequent electroplating operation. In some embodiments, the methods may include contacting the surface of the semiconductor substrate with a plasma to treat the surface by reducing metal oxides thereon and thereafter measuring a post-plasma-contact color signal from said surface, the color signal having one or more color components. The methods may then further include estimating the extent of the oxide reduction due to the plasma treatment based on the post-plasma contact color signal. In some embodiments, estimating the extent of the oxide reduction due to the plasma treatment is done based on the b* component of the post-plasma contact color signal. Also disclosed are plasma treatment apparatuses which may implement the foregoing methods.


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