The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Oct. 25, 2013
Applicant:
University of Utah Research Foundation, Salt Lake City, UT (US);
Inventors:
Jason Merrell, Draper, UT (US);
Feng Liu, Salt Lake City, UT (US);
Gerald B. Stringfellow, Salt Lake City, UT (US);
Assignee:
University of Utah Research Foundation, Salt Lake City, UT (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 25/02 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0262 (2013.01); C30B 25/02 (2013.01); H01L 21/0254 (2013.01); H01L 21/0257 (2013.01); H01L 21/0259 (2013.01); H01L 21/02389 (2013.01); H01L 21/02398 (2013.01); H01L 21/02458 (2013.01); C30B 29/403 (2013.01);
Abstract
Methods of controlling island size and density on an OMVPE growth film may comprise adding a surfactant at a critical concentration level, allowing a growth phase for a first period of time, and ending the growth phase when desired island size and density are achieved. For example, the island size and density of an OMVPE grown InGaN thin film may be controlled by adding an antimony surfactant at a critical concentration level.