The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2017

Filed:

Jun. 11, 2015
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventor:

Yukimune Watanabe, Hokuto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03B 25/10 (2006.01); C30B 25/10 (2006.01); C30B 25/14 (2006.01); C30B 25/18 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C30B 25/10 (2013.01); C30B 25/14 (2013.01); C30B 25/18 (2013.01); C30B 25/186 (2013.01); C30B 29/36 (2013.01);
Abstract

A method for manufacturing a cubic silicon carbide film includes: a first step of introducing a carbon-containing gas onto a silicon substrate and rapidly heating the silicon substrate to an epitaxial growth temperature of cubic silicon carbide so as to carbonize a surface of the silicon substrate and form a cubic silicon carbide film; and a second step of introducing a carbon-containing gas and a silicon-containing gas onto the cubic silicon carbide film while maintaining the cubic silicon carbide film at the epitaxial growth temperature of cubic silicon carbide, so as to allow further epitaxial growth of the cubic silicon carbide film.


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