The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Apr. 05, 2016
Applicant:
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Inventors:
Assignee:
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03B 37/018 (2006.01); C03B 37/014 (2006.01);
U.S. Cl.
CPC ...
C03B 37/01486 (2013.01); C03B 37/0142 (2013.01); C03B 2203/23 (2013.01); C03B 2207/36 (2013.01); C03B 2207/50 (2013.01); C03B 2207/64 (2013.01); C03B 2207/66 (2013.01); C03B 2207/70 (2013.01);
Abstract
In a device for producing a large-sized porous base material by a VAD process, the cracking and variation of the outer diameter of the base material are suppressed by forming a smooth tapered part, without changing the length of a non-effective part. In producing the porous base material by a VAD process, the time for a gas to reach a flow amount of the gas in a steady state from starting of the deposition is extended more in a burner that deposits glass microparticles on a layer closer to the outside of the base material.