The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2017

Filed:

Nov. 03, 2012
Applicant:

The Regents of the University of California, Oakland, CA (US);

Inventors:

Gregory P. Carman, Los Angeles, CA (US);

Daniel S. Levi, Pacific Palisades, CA (US);

Youngjae Chun, Pittsburgh, PA (US);

Fernando Vinuela, Los Angeles, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
A61F 2/06 (2013.01); A61F 2/01 (2006.01); A61F 2/07 (2013.01); A61F 2/90 (2013.01); A61L 31/02 (2006.01); A61L 31/14 (2006.01); C23C 14/00 (2006.01); C23C 14/18 (2006.01); C23C 14/58 (2006.01); C23C 14/34 (2006.01); A61F 2/82 (2013.01);
U.S. Cl.
CPC ...
A61F 2/07 (2013.01); A61F 2/90 (2013.01); A61L 31/022 (2013.01); A61L 31/14 (2013.01); C23C 14/0005 (2013.01); C23C 14/185 (2013.01); C23C 14/34 (2013.01); C23C 14/5806 (2013.01); C23C 14/5873 (2013.01); A61F 2002/068 (2013.01); A61F 2002/075 (2013.01); A61F 2002/077 (2013.01); A61F 2002/823 (2013.01); A61F 2230/0054 (2013.01);
Abstract

A flow diverter is described and fabricated using ultra-thin porous thin-film Nitinol, and is configured for implantation to a treatment site within a vessel for significant reduction in an intra-aneurismal flow velocity and vorticity. Using small size pores in a coverage area of only 10%, a 90% reduction in flow velocity into a pseudo-aneurysm can be achieved, with an almost immediate cessation of flow into an anatomical feature such as aneurysm sac in vivo. The size of the holes can be tailored to be any shape and range in size from 1-400 μm using photolithography and from 5-1000 nm using ebeam lithography.


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