The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2017

Filed:

Apr. 23, 2015
Applicant:

Centera Photonics Inc., Hsinchu, TW;

Inventors:

Tzu-Ching Yeh, Hsinchu County, TW;

Hsiao-Chin Lan, New Taipei, TW;

Chin-Ta Chen, Changhua County, TW;

Po-Kuan Shen, Miaoli County, TW;

Assignee:

Centera Photonics Inc., Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 10/00 (2013.01); H04B 10/50 (2013.01); H04B 10/60 (2013.01); H04B 10/40 (2013.01); H04B 10/25 (2013.01); G02B 6/00 (2006.01); H04J 14/00 (2006.01);
U.S. Cl.
CPC ...
H04B 10/503 (2013.01); G02B 6/00 (2013.01); H04B 10/2504 (2013.01); H04B 10/40 (2013.01); H04B 10/506 (2013.01); H04B 10/60 (2013.01);
Abstract

An optoelectronic transmitter including a semiconductor substrate, at least one laser source, and a high numerical aperture (NA) waveguide is provided. The laser source is disposed on the semiconductor substrate and configured to emit at least one laser beam. The high numerical aperture (NA) waveguide has an NA greater than or equal to 0.5 and is disposed on the semiconductor substrate. At least a part of the laser beam from the laser source enters the high NA waveguide, wherein no lens is disposed on the light path of the laser beam between the laser source and the high NA waveguide. An optoelectronic receiver and an optoelectronic transceiver are also provided.


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