The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2017

Filed:

Jan. 30, 2013
Applicant:

Jx Nippon Mining & Metals Corporation, Tokyo, JP;

Inventors:

Yoshitaka Shibuya, Ibaraki, JP;

Kazuhiko Fukamachi, Ibaraki, JP;

Atsushi Kodama, Ibaraki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01R 13/03 (2006.01); H01R 12/58 (2011.01); C23C 28/02 (2006.01); C25D 7/00 (2006.01); C25D 5/12 (2006.01); C25D 3/50 (2006.01); C25D 3/54 (2006.01); C25D 3/30 (2006.01); C25D 3/60 (2006.01);
U.S. Cl.
CPC ...
H01R 13/03 (2013.01); C23C 28/023 (2013.01); C25D 5/12 (2013.01); C25D 7/00 (2013.01); C25D 3/30 (2013.01); C25D 3/50 (2013.01); C25D 3/54 (2013.01); C25D 3/60 (2013.01); H01R 12/585 (2013.01);
Abstract

There are provided a press-fit terminal which has an excellent whisker resistance and a low inserting force, is unlikely to cause shaving of plating when the press-fit terminal is inserted into a substrate, and has a high heat resistance, and an electronic component using the same. A press-fit terminal comprises: a female terminal connection part provided at one side of an attached part to be attached to a housing; and a substrate connection part provided at the other side and attached to a substrate by press-fitting the substrate connection part into a through-hole formed in the substrate. At least the substrate connection part has the surface structure described below, and the press-fit terminal has an excellent whisker resistance. The surface structure comprises: an A layer formed as an outermost surface layer and formed of Sn, In, or an alloy thereof; a B layer formed below the A layer and constituted of one or two or more selected from the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os, and Ir; and a C layer formed below the B layer and constituted of one or two or more selected from the group consisting of Ni, Cr, Mn, Fe, Co, and Cu. The A layer has a thickness of 0.002 to 0.2 μm. The B layer has a thickness of 0.001 to 0.3 μm. The C layer has a thickness of 0.05 μm or larger.


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