The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2017

Filed:

Oct. 18, 2012
Applicant:

Dalhousie University, Halifax, CA;

Inventors:

Philip P. Garland, Fredericton, CA;

Robert B. A. Adamson, Halifax, CA;

Andre B. Bezanson, Halifax, CA;

Jeremy A. Brown, Halifax, CA;

Assignee:

DALHOUSIE UNIVERSITY, Halifax, Nova Scotia, CA;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 41/18 (2006.01); C30B 33/04 (2006.01); G01S 7/52 (2006.01); C30B 29/30 (2006.01); C30B 29/32 (2006.01); C30B 33/02 (2006.01); H01L 41/257 (2013.01); B06B 1/06 (2006.01); G10K 11/24 (2006.01); C30B 1/04 (2006.01); C30B 30/02 (2006.01); H01L 41/047 (2006.01); H01L 41/29 (2013.01); G02B 6/10 (2006.01);
U.S. Cl.
CPC ...
H01L 41/18 (2013.01); B06B 1/0622 (2013.01); C30B 1/04 (2013.01); C30B 29/30 (2013.01); C30B 29/32 (2013.01); C30B 30/02 (2013.01); C30B 33/02 (2013.01); C30B 33/04 (2013.01); G01S 7/52 (2013.01); G10K 11/24 (2013.01); H01L 41/257 (2013.01); G02B 6/105 (2013.01); H01L 41/047 (2013.01); H01L 41/29 (2013.01); Y10T 428/24983 (2015.01);
Abstract

Among other things, piezoelectric materials and methods of their manufacture are described; particularly methods of forming regions of varying crystal structure within a relaxor piezoelectric substrate. Such methods may including heating the piezoelectric substrate above the transition temperature and below the Curie temperature such that a first phase transition occurs to a first crystal structure; rapidly cooling the piezoelectric substrate below the transition temperature at a cooling rate that is sufficiently high for the first crystal structure to persist; and applying an electric field through one or more selected regions of the piezoelectric substrate, such that within the one or more selected regions, a second phase transition occurs and results in a second crystal structure.


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