The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2017

Filed:

Jun. 03, 2015
Applicant:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Inventors:

So Ra Lee, Ansan-si, KR;

Chang Yeon Kim, Ansan-si, KR;

Ju Yong Park, Ansan-si, KR;

Sung Su Son, Ansan-si, KR;

Assignee:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/64 (2010.01); H01L 27/15 (2006.01); H01L 29/861 (2006.01); H01L 33/38 (2010.01); H01L 33/52 (2010.01); H01L 33/62 (2010.01); H01L 27/02 (2006.01); H01L 25/16 (2006.01); H01L 33/48 (2010.01); H01L 33/58 (2010.01);
U.S. Cl.
CPC ...
H01L 33/647 (2013.01); H01L 27/0248 (2013.01); H01L 29/861 (2013.01); H01L 33/382 (2013.01); H01L 33/387 (2013.01); H01L 25/167 (2013.01); H01L 29/8613 (2013.01); H01L 33/486 (2013.01); H01L 33/58 (2013.01); H01L 33/64 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Exemplary embodiments provide a light emitting diode and a method for manufacturing the same. The light emitting diode includes a light emitting structure, a plurality of holes formed through a second conductive type semiconductor layer and an active layer such that a first conductive type semiconductor layer is partially exposed therethrough, and a first electrode and a second electrode electrically connected to the first conductive type semiconductor layer and the second conductive type semiconductor layer, respectively, while being insulated from each other. The second electrode includes openings corresponding to the plurality of holes, a plurality of unit electrode layers separated from each other, and at least one connection layer electrically connecting at least two unit electrode layers to each other. The first electrode forms ohmic contact with the first conductive type semiconductor layer through the plurality of holes and partially covers the light emitting structure.


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