The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2017

Filed:

Jan. 24, 2014
Applicant:

Centre National DE LA Recherche Scientifique (Cnrs), Paris, FR;

Inventors:

Gilles Nataf, Golfe Juan, FR;

Philippe De Mierry, Valbonne, FR;

Sébastien Chenot, Mougins, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/08 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 21/0254 (2013.01); H01L 33/0075 (2013.01); H01L 33/08 (2013.01); H01L 21/0242 (2013.01); H01L 21/02389 (2013.01); H01L 21/02458 (2013.01); H01L 21/02494 (2013.01);
Abstract

The invention relates to a method for the production of a light-emitting diode, characterized in that the method comprises a step of preparing a light-emitting layer () on a front face of a support (), said emitting layer comprising at least two adjacent quantum wells () emitting at different wavelengths, said quantum wells () being in contact with the front face of the support. According to the invention, the step in which the light-emitting layer is deposited comprises a sub-step consisting in locally varying the temperature of a rear face of the support opposite the front face such that the front face of the support comprises at least two zones at different temperatures.


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