The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Mar. 19, 2013
Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;
Shaohua Huang, Xiamen, CN;
Jyh-Chiarng Wu, Xiamen, CN;
Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;
Abstract
Disclosed is a light-emitting diode with an n-type graded buffer layer and a manufacturing method therefor. An epitaxial structure of a light-emitting diode comprises: a growth substrate; an n-type graded buffer layer located on the growth substrate; an n-type limiting layer () located on the n-type graded buffer layer; an active layer () located on the n-type limiting layer (); and a p-type limiting layer () located on the active layer (). A buffer layer is converted into an n-type graded buffer layer by means of an ion implantation method, and is applied to a light-emitting diode chip of a vertical structure while ensuring that a high-quality epitaxial structure is obtained, thereby being able to effectively reduce the contact resistance.