The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Mar. 15, 2016
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Yi-Chun Kao, New Taipei, TW;
Hsin-Hua Lin, New Taipei, TW;
Po-Li Shih, New Taipei, TW;
Wei-Chih Chang, New Taipei, TW;
I-Min Lu, New Taipei, TW;
I-Wei Wu, New Taipei, TW;
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;
Abstract
A thin film transistor array panel includes a first conductive layer including a gate electrode; a channel layer disposed over the gate; and a second conductive layer disposed over the channel layer. The second conductive layer includes a multi-layered portion defining a source electrode and a drain electrode, which includes a first sub-layer, a second sub-layer, and a third sub-layer sequentially disposed one over another. Both the third and the first sub-layers include indium and zinc oxide materials. An indium to zinc content ratio in the first sub-layer is greater than that in the third sub-layer. The content ratio differentiation between the first and the third sub-layers affects a lateral etch profile associated with a gap generated in the second conductive layer between the source and the drain electrodes, where the associated gap width in the third sub-layer is wider than that that in the first sub-layer.