The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Dec. 18, 2015
Applicants:
Byungjae Park, Seongnam-si, KR;
Heonjong Shin, Yongin-si, KR;
Hagju Cho, Seongnam-si, KR;
Kyounghwan Yeo, Seoul, KR;
Inventors:
Byungjae Park, Seongnam-si, KR;
Heonjong Shin, Yongin-si, KR;
Hagju Cho, Seongnam-si, KR;
Kyounghwan Yeo, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 29/0649 (2013.01); H01L 29/41791 (2013.01); H01L 29/66545 (2013.01);
Abstract
A semiconductor device including a fin active region protruding from a substrate and an isolation region defining the fin active region, a gate pattern intersecting the fin active region and the isolation region, and gate spacer formed on a side surface of the gate pattern and extending onto a surface of the isolation region is provided.