The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Sep. 11, 2012
Applicants:
Sarunya Bangsaruntip, Mount Kisco, NY (US);
Guy M. Cohen, Mohegan Lake, NY (US);
Jeffrey W. Sleight, Ridgefield, CT (US);
Inventors:
Sarunya Bangsaruntip, Mount Kisco, NY (US);
Guy M. Cohen, Mohegan Lake, NY (US);
Jeffrey W. Sleight, Ridgefield, CT (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); B82Y 10/00 (2011.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42392 (2013.01); B82Y 10/00 (2013.01); H01L 29/0665 (2013.01); H01L 29/0673 (2013.01); H01L 29/66439 (2013.01); H01L 29/78696 (2013.01);
Abstract
A method of modifying a wafer having a semiconductor disposed on an insulator is provided and includes forming pairs of semiconductor pads connected via respective nanowire channels at each of first and second regions with different initial semiconductor thicknesses and reshaping the nanowire channels into nanowires to each have a respective differing thickness reflective of the different initial semiconductor thicknesses.